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NXP Semiconductors Electronic Components Datasheet

BFG591 Datasheet

NPN 7 GHz wideband transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BFG591
NPN 7 GHz wideband transistor
Product specification
Supersedes data of November 1992
File under Discrete Semiconductors, SC14
1995 Sep 04


NXP Semiconductors Electronic Components Datasheet

BFG591 Datasheet

NPN 7 GHz wideband transistor

No Preview Available !

Philips Semiconductors
NPN 7 GHz wideband transistor
Product specification
BFG591
FEATURES
High power gain
Low noise figure
High transition frequency
Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
fpage
PINNING
PIN DESCRIPTION
1 emitter
2 base
3 emitter
4 collector
4
123
Top view
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
IC
Ptot
hFE
Cre
fT
GUM
s21 2
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
open emitter
open base
up to Ts = 80 °C; note 1
IC = 70 mA; VCE = 8 V
IC = Ic = 0; VCE = 12 V; f = 1 MHz
IC = 70 mA; VCE = 12 V; f = 1 GHz
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
IC = 70 mA; VCE = 12 V;
f = 900 MHz; Tamb = 25 °C
Note
1. Ts is the temperature at the soldering point of the collector pin.
MIN.
60
TYP.
90
0.7
7
13
MAX.
20
15
200
2
250
UNIT
V
V
mA
W
pF
GHz
dB
12 dB
1995 Sep 04
2


Part Number BFG591
Description NPN 7 GHz wideband transistor
Maker NXP
Total Page 12 Pages
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