BFU510 Datasheet - NXP

NPN SiGe wideband transistor

BFU510 Features

* Very high power gain

* Very low noise figure

* High transition frequency

* Emitter is thermal lead

* Low feedback capacitance

* 45 GHz SiGe process. APPLICATIONS

* RF front end

* Wideband applications, e.g. analog and digital cellular

BFU510 General Description

handbook, halfpage 3 4 DESCRIPTION NPN SiGe wideband transistor for low voltage applications in a plastic, 4-pin dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE Gmax NF PARAMETER collector-base voltage collector current (DC) total power dissipation DC current gain.

BFU510 Datasheet (112.28 KB)

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Datasheet Details

Part number:

BFU510

Manufacturer:

NXP ↗

File Size:

112.28 KB

Description:

Npn sige wideband transistor.
DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFU510 NPN SiGe wideband transistor Product speciﬁcation Supersedes data of 2001 Nov 08 2003 Jun 12 Phil.

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BFU510 Features

BFU510 General Description

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