BFU530 Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.7 dB at 900 MHz
- Maximum stable gain 21.5 dB at 900 MHz
- 11 GHz fT silicon technology
- Part: BFU530
- Manufacturer: NXP Semiconductors (official site)
- Size: 234.26 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BFU530A | NPN wideband silicon RF transistor |
| BFU530W | NPN wideband silicon RF transistor |
| BFU530X | NPN wideband silicon RF transistor |
| BFU530XR | NPN wideband silicon RF transistor |
| BFU510 | NPN SiGe wideband transistor |
BFU530 Description
NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT143B package. The BFU530 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.