BFU520Y Datasheet - NXP

Dual NPN wideband silicon RF transistor

* Low noise, high breakdown RF transistor

* AEC-Q101 qualified

* Minimum noise figure (NFmin) = 0.65 dB at 900 MHz

* Maximum stable gain 19 dB at 900 MHz

* 11 GHz fT silicon technology 1.3 Applications

* Applications requiring high supply voltages and high breakdown voltages

BFU520Y

299.15 KB

Dual npn wideband silicon rf transistor.

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BFU520Y Dual NPN wideband silicon transistor NXP

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