BFU520Y Key Features
- Low noise, high breakdown RF transistor
- AEC-Q101 qualified
- Minimum noise figure (NFmin) = 0.65 dB at 900 MHz
- Maximum stable gain 19 dB at 900 MHz
- 11 GHz fT silicon technology
- Part: BFU520Y
- Description: Dual NPN wideband silicon RF transistor
- Manufacturer: NXP Semiconductors
- Size: 299.15 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BFU520 | NPN wideband silicon RF transistor |
| BFU520A | NPN wideband silicon RF transistor |
| BFU520W | NPN wideband silicon RF transistor |
| BFU520X | NPN wideband silicon RF transistor |
| BFU520XR | NPN wideband silicon RF transistor |