Description
160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.
40[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz
CAUTION This device is sensitive t
Features
- I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 32 W N Power gain = 23 dB N Efficiency = 28 % N ACPR =.
- 40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efficiency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use
1.3.
BLC6G10-160_PhilipsSemiconductors.pdf
