BLC6G10-160 Datasheet UHF power LDMOS transistor

Manufacturer: NXP Semiconductors

Datasheet Details

160 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz.

Table 1: Typical performance Typical RF performance at Tcase = 25 °C in a class-AB production test circuit.

Mode of operation 2-carrier W-CDMA [1] f (MHz) 920 to 960 VDS (V) 32 PL(AV) (W) 32 Gp (dB) 23 ηD (%) 28 ACPR (dBc) −40[1] Test signal: 3GPP;

www.DataSheet4U.com BLC6G10-160; BLC6G10LS-160 UHF power LDMOS transistor Rev.

01 — 12 May 2006 Objective data sheet 1.

Product proﬁle 1.

I Typical 2-carrier W-CDMA performance at frequencies of 920 MHz and 960 MHz, a supply voltage of 32 V and an IDq of 1200 mA: N Average output power = 32 W N Power gain = 23 dB N Efﬁciency = 28 % N ACPR =.
40 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (800 MHz to 1000 MHz) I Internally matched for ease of use 1.3.