BLF175 Datasheet - NXP

HF/VHF power MOS transistor

BLF175 General Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (V.

BLF175 Datasheet (138.50 KB)

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BLF175

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NXP ↗

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138.50 KB

Description:

Hf/vhf power mos transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product speciﬁcation September 1992 Philips Semiconductors Product speciﬁcat.

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BLF175 VHF power MOS transistor NXP

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BLF175 General Description

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