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BLF178P
Power LDMOS transistor
Rev. 3 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.
Table 1. Application information Test signal
CW pulsed RF
f (MHz) 108 108
VDS
PL
(V) (W)
50 1000
50 1200
Gp (dB) 26 28.5
D (%) 75 75
1.2 Features and benefits
Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1200 W Power gain = 28.
BLF178P Datasheet
