BLF178P
description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.
Table 1. Application information Test signal
CW pulsed RF f (MHz) 108 108
(V) (W)
50 1000
50 1200
Gp (d B) 26 28.5
D (%) 75 75
1.2 Features and benefits
- Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 m A, a tp of 100 s with of 20 %:
- Output power = 1200 W
- Power gain = 28.5 d B
- Efficiency = 75 %
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (10 MHz to 110 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Industrial, scientific and medical applications
- FM transmitter applications
NXP Semiconductors
Power LDMOS transistor
2. Pinning information
Table 2. Pin 1 2 3 4 5
Pinning Description drain1 drain2 gate1...
