BLF178P Description
A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.
BLF178P Key Features
- Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with
- Output power = 1200 W
- Power gain = 28.5 dB
- Efficiency = 75 %
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (10 MHz to 110 MHz)
BLF178P Applications
- Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with of 20 %: Output power = 1200 W Power