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BLF178P - Power LDMOS transistor

Datasheet Summary

Description

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band.

Table 1.

Features

  • Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:.
  • Output power = 1200 W.
  • Power gain = 28.5 dB.
  • Efficiency = 75 %.
  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (10 MHz to 110 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances.

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Datasheet Details

Part number BLF178P
Manufacturer NXP
File Size 230.86 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF178P Datasheet
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BLF178P Power LDMOS transistor Rev. 2 — 16 February 2012 Product data sheet 1. Product profile 1.1 General description A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 110 MHz band. Table 1. Application information Test signal CW pulsed RF f (MHz) 108 108 VDS PL (V) (W) 50 1000 50 1200 Gp (dB) 26 28.5 D (%) 75 75 1.2 Features and benefits  Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1200 W  Power gain = 28.
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