BLF177
FEATURES
- High power gain
- Low intermodulation distortion
- Easy power control
- Good thermal stability
- Withstands full load mismatch. andbook, halfpage 1
PIN CONFIGURATION
4 d
DESCRIPTION
Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for further information. PINNING
- SOT121 PIN 1 2 3 4 drain source gate source DESCRIPTION g
MBB072 s
MLA876
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety
- toxic materials This product contains...
