BLF177 Datasheet PDF - NXP HF/VHF power MOS transistor Specs

BLF177 - HF/VHF power MOS transistor

Datasheet Summary

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range.

The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

High power gain.
Low intermodulation distortion.
Easy power control.
Good thermal stability.
Withstands full load mismatch. andbook, halfpage 1 BLF177 PIN.

Datasheet Details

Part number	BLF177
Manufacturer	NXP
File Size	121.74 KB
Description	HF/VHF power MOS transistor
Datasheet	BLF177 Datasheet
Additional preview pages of the BLF177 datasheet.

📁 Similar Datasheet

BLF1721M8LS200 - Power LDMOS transistor (Ampleon)

BLF174XR - Power LDMOS transistor (Ampleon)

BLF174XRS - Power LDMOS transistor (Ampleon)

BLF178P - Power LDMOS transistor (Ampleon)

BLF178XR - Power LDMOS transistor (Ampleon)

BLF178XRS - Power LDMOS transistor (Ampleon)

BLF1043 - UHF power LDMOS transistor (Ampleon)

BLF10H6600P - Power LDMOS transistor (Ampleon)

BLF10H6600PS - Power LDMOS transistor (Ampleon)

BLF10M6135 - Power LDMOS transistor (Ampleon)

Full PDF Text Transcription

Click to expand full text

DISCRETE SEMICONDUCTORS DATA SHEET BLF177 HF/VHF power MOS transistor Product speciﬁcation File under Discrete Semiconductors, SC08a September 1992 Philips Semiconductors Product speciﬁcation HF/VHF power MOS transistor FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch. andbook, halfpage 1 BLF177 PIN CONFIGURATION 4 d DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolated from the flange.

Published: Mar 23, 2005 |