BLF175 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor Features - High power gain - Low intermodulation distortion - Easy power control - Good thermal stability - Withstands full load mismatch - Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for further information. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION 2 3 MSB057 PIN CONFIGURATION ook, halfpage 4 d g MBB072 s Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION class-A class-AB CW, class-B Note 1. 2-tone efficiency. f (MHZ) 28 28 108 VDS (V) 50 50 50 IDQ (m A) 800 150 30 PL (W) 8 (PEP) 30 (PEP) 30 GP (d B) > 24 typ. 24 typ. 20 ηD (%) - typ. 40 (note 1) typ. 65 d3 (d B) < - 40 typ. - 35 - September 1992 Philips Semiconductors Product...