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BLF175 - HF/VHF power MOS transistor

Datasheet Summary

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range.

The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

  • High power gain.
  • Low intermodulation distortion.
  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch.
  • Gold metallization ensures excellent reliability.

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Datasheet Details

Part number BLF175
Manufacturer NXP
File Size 138.50 KB
Description HF/VHF power MOS transistor
Datasheet download datasheet BLF175 Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET BLF175 HF/VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification HF/VHF power MOS transistor FEATURES • High power gain • Low intermodulation distortion • Easy power control • Good thermal stability • Withstands full load mismatch • Gold metallization ensures excellent reliability. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the HF/VHF frequency range. The transistor has a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the 'General' section for further information.
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