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BLF178XR Datasheet

Manufacturer: NXP Semiconductors
BLF178XR datasheet preview

BLF178XR Details

Part number BLF178XR
Datasheet BLF178XR-NXP.pdf
File Size 192.69 KB
Manufacturer NXP Semiconductors
Description Power LDMOS transistor
BLF178XR page 2 BLF178XR page 3

BLF178XR Overview

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

BLF178XR Key Features

  • Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with 
  • Output power = 1400 W
  • Power gain = 28 dB
  • Efficiency = 72 %
  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 128 MHz)

BLF178XR Applications

  • Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 mA, a tp of 100 s with  of 20 %:  Output power = 1400 W  Power

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