BLF178XRS
description
A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.
Table 1. Application information Test signal
CW pulsed RF f (MHz) 108 108
(V) (W)
50 1200
50 1400
Gp (d B) 23 28
D (%) 80 72
1.2 Features and benefits
- Typical pulsed performance at frequency of 108 MHz, a supply voltage of 50 V and an IDq of 40 m A, a tp of 100 s with of 20 %:
- Output power = 1400 W
- Power gain = 28 d B
- Efficiency = 72 %
- Easy power control
- Integrated ESD protection
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Designed for broadband operation (HF to 128 MHz)
- pliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(Ro HS)
1.3 Applications
- Industrial, scientific and medical applications
- Broadcast transmitter applications
NXP Semiconductors
BLF178XR; BLF178XRS
Power LDMOS transistor
2. Pinning information
Table 2. Pinning Pin Description
BLF178XR (SOT539A) 1...
