Datasheet4U Logo Datasheet4U.com

BLF174XRS - Power LDMOS transistor

This page provides the datasheet information for the BLF174XRS, a member of the BLF174XR Power LDMOS transistor family.

Datasheet Summary

Description

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

Table 1.

Features

  • Easy power control.
  • Integrated ESD protection.
  • Excellent ruggedness.
  • High efficiency.
  • Excellent thermal stability.
  • Designed for broadband operation (HF to 128 MHz).
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3.

📥 Download Datasheet

Datasheet preview – BLF174XRS

Datasheet Details

Part number BLF174XRS
Manufacturer NXP
File Size 140.02 KB
Description Power LDMOS transistor
Datasheet download datasheet BLF174XRS Datasheet
Additional preview pages of the BLF174XRS datasheet.

📁 Similar Datasheet

Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
BLF174XR; BLF174XRS Power LDMOS transistor Rev. 1 — 25 June 2013 Product data sheet 1. Product profile 1.1 General description A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band. Table 1. Application information Test signal f (MHz) CW 108 pulsed RF 108 VDS PL Gp D (V) (W) (dB) (%) 50 600 28.5 74 50 600 29 73 1.2 Features and benefits  Easy power control  Integrated ESD protection  Excellent ruggedness  High efficiency  Excellent thermal stability  Designed for broadband operation (HF to 128 MHz)  Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.
Published: |