BLF177 transistor equivalent, hf/vhf power mos transistor.
* High power gain
* Low intermodulation distortion
* Easy power control
* Good thermal stability
* Withstands full load mismatch.
andbook, halfpage 1
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in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. A.
Silicon N-channel enhancement mode vertical D-MOS transistor designed for industrial and military applications in the HF/VHF frequency range. The transistor is encapsulated in a 4-lead, SOT121 flange envelope, with a ceramic cap. All leads are isolat.
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