BLF2022-120 transistor equivalent, uhf push-pull power ldmos transistor.
* High power gain
* Easy power control
* Excellent ruggedness
* Source on underside eliminates DC isolators, reducing common mode inductance
* Designe.
* Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range. DESCRIPTION.
Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The common source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a .
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