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BLF2022-125 Datasheet - NXP

UHF power LDMOS transistor

BLF2022-125 Features

* Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A

* Output power = 20 W (AV)

* Gain = 12 dB

* Efficiency = 19%

* ACPR =

* 42 dBc at 3.84 MHz

* Easy power control

* Excellent ruggedness

* High power gain

BLF2022-125 General Description

125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. Top view 2 1 BLF2022-125 PINNING - SOT634A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 MBL367 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a commo.

BLF2022-125 Datasheet (85.76 KB)

Preview of BLF2022-125 PDF

Datasheet Details

Part number:

BLF2022-125

Manufacturer:

NXP ↗

File Size:

85.76 KB

Description:

Uhf power ldmos transistor.
www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 200.

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BLF2022-125 UHF power LDMOS transistor NXP

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