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BLF2022-125 Datasheet, NXP

BLF2022-125 transistor equivalent, uhf power ldmos transistor.

BLF2022-125 Avg. rating / M : 1.0 rating-13

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BLF2022-125 Datasheet

Features and benefits


* Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A
  – Output power = 20 W (AV)
  – Gain = 12 dB
  – Ef.

Application


* RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.

Description

125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. Top view 2 1 BLF2022-125 PINNING - SOT634A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 MBL367 Fig.1 Simplified outline. QUICK REFE.

Image gallery

BLF2022-125 Page 1 BLF2022-125 Page 2 BLF2022-125 Page 3

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