BLF2022-125 Description
125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit; single-carrier W-CDMA test model 1, 64 channels, 3.84 MHz channel bandwidth;.
BLF2022-125 Key Features
- Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A
- Output power = 20 W (AV)
- Gain = 12 dB
- Efficiency = 19%
- ACPR = -42 dBc at 3.84 MHz
- Easy power control
- Excellent ruggedness
- High power gain
- Excellent thermal stability
- Designed for broadband operation (2000 to 2200 MHz)
BLF2022-125 Applications
- RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range DESCRIPTION 125 W LDMOS power transistor for
- SOT634A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION