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BLF2022-90 Datasheet Uhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: .. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 ..

General Description

1 3 MBK394 APPLICATIONS • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.

DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.

QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a mon source class-AB test circuit.

Key Features

  • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 mA:.
  • Output power = 11.5 W (AV).
  • Gain = 12.5 dB.
  • Efficiency = 20%.
  • ACPR =.
  • 42 dBc at 3.84 MHz.
  • dim =.
  • 36 dBc.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (2000 to 2200 MHz).
  • Internally matched for ease of use. Top view 2 handboo.

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BLF2022-90 Distributor