BLF2022-90 Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-90 UHF power LDMOS transistor Product specification Supersedes data of 2002 Sep 09 2003 Feb 24 .. Philips Semiconductors Product specification UHF power LDMOS transistor Features - Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 750 m A: - Output power = 11.5 W (AV) - Gain = 12.5 d B - Efficiency = 20% - ACPR = - 42 d Bc at 3.84 MHz - dim = - 36 d Bc - Easy power control - Excellent ruggedness - High power gain - Excellent thermal stability - Designed for broadband operation (2000 to 2200 MHz) - Internally matched for ease of use. Top view 2 handbook, halfpage PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION MBK394 APPLICATIONS - RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. DESCRIPTION 90 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a mon source class-AB test circuit. MODE OF OPERATION 2-tone, class-AB W-CDMA, 3GPP test model 1, 64 channels with 66% clipping f (MHz) f1 = 2170; f2 = 2170.1 2140 VDS (V) 28 28 IDQ (m A) 750 750 PL (W) 90 (PEP) 15 (AV) Gp (d B) 12.8 13.2 ηD (%) 35.7 20 dim (d...