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BLF2022-120 - UHF push-pull power LDMOS transistor

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NXP

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BLF2022-120 UHF push-pull power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLF2022-120

Datasheet Details

Part number	BLF2022-120
Manufacturer	NXP
File Size	123.90 KB
Description	UHF push-pull power LDMOS transistor
Datasheet	BLF2022-120 Datasheet
Additional preview pages of the BLF2022-120 datasheet.

Product details

Description

Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap.

The common source is connected to the mounting flange.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a common source test circuit.

Features

High power gain.
Easy power control.
Excellent ruggedness.
Source on underside eliminates DC isolators, reducing common mode inductance.
Designed for broadband operation (HF to 2.2 GHz).

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Published: Aug 17, 2007 |