BLF2022-120 Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 .. Philips Semiconductors Preliminary specification UHF push-pull power LDMOS transistor Features - High power gain - Easy power control - Excellent ruggedness - Source on underside eliminates DC isolators, reducing mon mode inductance - Designed for broadband operation (HF to 2.2 GHz). APPLICATIONS - mon source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range. DESCRIPTION Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The mon source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 PL (W) 120 (PEP) Gp (d B) >11 Top view 1 2 PINNING - SOT539A PIN 1 2 3 4 5 drain 1 drain 2 gate 1 gate 2 source connected to flange DESCRIPTION 5 3 4 MBK880 Fig.1 Simplified outline. ηD (%) >30 dim (d Bc) ≤- 25 LIMITING VALUES In accordance with the...