BLF2022-120 Description
Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap. The mon source is connected to the mounting flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.
BLF2022-120 Key Features
- High power gain
- Easy power control
- Excellent ruggedness
- Source on underside eliminates DC isolators, reducing mon mode inductance
- Designed for broadband operation (HF to 2.2 GHz)