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BLF2022-120 Datasheet Uhf Push-pull Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: .. DISCRETE SEMICONDUCTORS DATA SHEET M3D427 BLF2022-120 UHF push-pull power LDMOS transistor Preliminary specification 2000 Dec 12 ..

General Description

Push-pull silicon N-channel enhancement mode lateral D-MOS transistor encapsulated in a 4-lead flange package (SOT539A) with a ceramic cap.

The mon source is connected to the mounting flange.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Source on underside eliminates DC isolators, reducing common mode inductance.
  • Designed for broadband operation (HF to 2.2 GHz).

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BLF2022-120 Distributor