BLF2022-40 Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-40 UHF power LDMOS transistor Preliminary specification 2001 April 05 .. Philips Semiconductors Preliminary specification UHF power LDMOS transistor Features - High power gain - Easy power control - Excellent ruggedness - Designed for broadband operation (2.0 to 2.2 GHz) - Internal input and output matching for high gain and efficiency - Improved linearity at backoff levels. PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION APPLICATIONS - mon source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range - Suitable for GSM, Edge, CDMA and WCDMA applications. DESCRIPTION Silicon N-channel enhancement mode lateral D-MOS transistors encapsulated in a 2-lead SOT608A flange package with a ceramic cap. The mon source is connected to the mounting flange. Fig.1 Simplified outline SOT608A. 2 Top view MBL290 QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION Two-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 PL (W) 40 (PEP) Gp (d B) >10.5 ηD (%) >30 dim (d Bc) ≤- 25 LIMITING VALUES In accordance with the...