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BLF2022-40 - UHF power LDMOS transistor

General Description

APPLICATIONS Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range

Suitable for GSM, Edge, CDMA and WCDMA applications.

Key Features

  • High power gain.
  • Easy power control.
  • Excellent ruggedness.
  • Designed for broadband operation (2.0 to 2.2 GHz).
  • Internal input and output matching for high gain and efficiency.
  • Improved linearity at backoff levels. 1 BLF2022-40.

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www.DataSheet4U.com DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-40 UHF power LDMOS transistor Preliminary specification 2001 April 05 www.DataSheet4U.com Philips Semiconductors Preliminary specification UHF power LDMOS transistor FEATURES • High power gain • Easy power control • Excellent ruggedness • Designed for broadband operation (2.0 to 2.2 GHz) • Internal input and output matching for high gain and efficiency • Improved linearity at backoff levels. 1 BLF2022-40 PINNING PIN 1 2 3 drain gate source, connected to flange DESCRIPTION APPLICATIONS • Common source class-AB operation for PCN and PCS applications in the 2000 to 2200 MHz frequency range • Suitable for GSM, Edge, CDMA and WCDMA applications.