Datasheet Details
| Part number | BLF2022-30 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 145.77 KB |
| Description | UHF power LDMOS transistor |
| Datasheet |
 BLF2022-30 Datasheet
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General Description
3
APPLICATIONS
RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.
DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.
Key Features
- Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA:.
- Output power = 3.5 W (AV).
- Gain = 12.9 dB.
- Efficiency = 16.5%.
- ACPR =.
- 45 dBc at 3.84 MHz.
- dim =.
- 42 dBc.
- Easy power control.
- Excellent ruggedness.
- High power gain.
- Excellent thermal stability.
- Designed for broadband operation (2000 to 2200 MHz).
- Internally matched for ease of use. 2 1 BLF2022-30 P.