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BLF2022-30

Manufacturer: NXP Semiconductors

BLF2022-30 datasheet by NXP Semiconductors.

BLF2022-30 datasheet preview

BLF2022-30 Datasheet Details

Part number BLF2022-30
Datasheet BLF2022-30_PhilipsSemiconductors.pdf
File Size 145.77 KB
Manufacturer NXP Semiconductors
Description UHF power LDMOS transistor
BLF2022-30 page 2 BLF2022-30 page 3

BLF2022-30 Overview

3 APPLICATIONS RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a mon source test circuit.

BLF2022-30 Key Features

  • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA
  • Output power = 3.5 W (AV)
  • Gain = 12.9 dB
  • Efficiency = 16.5%
  • ACPR = -45 dBc at 3.84 MHz
  • dim = -42 dBc
  • Easy power control
  • Excellent ruggedness
  • High power gain
  • Excellent thermal stability
NXP Semiconductors logo - Manufacturer

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BLF2022-30 Distributor

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