BLF2022-30 Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-30 UHF power LDMOS transistor Product specification Supersedes data of 2002 Dec 19 2003 Feb 24 .. Philips Semiconductors Product specification UHF power LDMOS transistor Features - Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 m A: - Output power = 3.5 W (AV) - Gain = 12.9 d B - Efficiency = 16.5% - ACPR = - 45 d Bc at 3.84 MHz - dim = - 42 d Bc - Easy power control - Excellent ruggedness - High power gain - Excellent thermal stability - Designed for broadband operation (2000 to 2200 MHz) - Internally matched for ease of use. 2 1 PINNING - SOT608A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION APPLICATIONS - RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION 2-tone, class-AB two-carrier W-CDMA test model 1, 64 channels f (MHz) f1 = 2170; f2 = 2170.1 f1 = 2155; f2 = 2165 VDS (V) 28 28 IDQ (m A) 240 270 PL (W) Top...