Datasheet4U Logo Datasheet4U.com

BLF2022-30 Datasheet Uhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: .. DISCRETE SEMICONDUCTORS DATA SHEET M3D750 BLF2022-30 UHF power LDMOS transistor Product specification Supersedes data of 2002 Dec 19 2003 Feb 24 ..

General Description

3 APPLICATIONS • RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range.

DESCRIPTION 30 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.

QUICK REFERENCE DATA Typical RF performance at Th = 25 °C in a mon source test circuit.

Key Features

  • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 240 mA:.
  • Output power = 3.5 W (AV).
  • Gain = 12.9 dB.
  • Efficiency = 16.5%.
  • ACPR =.
  • 45 dBc at 3.84 MHz.
  • dim =.
  • 42 dBc.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (2000 to 2200 MHz).
  • Internally matched for ease of use. 2 1 BLF2022-30 P.

More Datasheets from NXP Semiconductors

Part Number Description
BLF2022-120 UHF push-pull power LDMOS transistor
BLF2022-125 UHF power LDMOS transistor
BLF2022-40 UHF power LDMOS transistor
BLF2022-70 UHF power LDMOS transistor
BLF2022-90 UHF power LDMOS transistor
BLF202 HF/VHF power MOS transistor
BLF2043 UHF power LDMOS transistor
BLF2045 UHF power LDMOS transistor
BLF2047 UHF power LDMOS transistor
BLF2047L UHF power LDMOS transistor

BLF2022-30 Distributor