BLF2022-70 Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 BLF2022-70 UHF power LDMOS transistor Product specification Supersedes data of 2002 Jul 04 2003 Feb 24 .. Philips Semiconductors Product specification UHF power LDMOS transistor Features - Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A: - Output power = 7.5 W (AV) - Gain = 12.5 d B - Efficiency = 20% - ACPR = - 42 d Bc at 3.84 MHz - dim = - 36 d Bc - Easy power control - Excellent ruggedness - High power gain - Excellent thermal stability - Designed for broadband operation (2000 to 2200 MHz) - Internally matched for ease of use. Top view 2 handbook, halfpage PINNING - SOT502A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION MBK394 APPLICATIONS - RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range. DESCRIPTION 70 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit. MODE OF OPERATION 2-tone, class-AB f (MHz) f1 = 2170; f2 = 2170.1 VDS (V) 28 CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. PL (W) 65 (PEP) Gp (d B) >11 ηD (%) >30 dim (d Bc) ≤-...