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BLF2022-125 - UHF power LDMOS transistor

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NXP

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BLF2022-125 UHF power LDMOS transistor by NXP - Datasheet Preview — Datasheet preview – BLF2022-125

Datasheet Details

Part number	BLF2022-125
Manufacturer	NXP
File Size	85.76 KB
Description	UHF power LDMOS transistor
Datasheet	BLF2022-125 Datasheet
Additional preview pages of the BLF2022-125 datasheet.

Product details

Description

125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.

Features

Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A.
Output power = 20 W (AV).
Gain = 12 dB.
Efficiency = 19%.
ACPR =.
42 dBc at 3.84 MHz.
Easy power control.
Excellent ruggedness.
High power gain.
Excellent thermal stability.
Designed for broadband operation (2000 to 2200 MHz).
Internally matched for ease of use.

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Published: Aug 17, 2007 |