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BLF2022-125 Datasheet Uhf Power Ldmos Transistor

Manufacturer: NXP Semiconductors

Overview: .. DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 ..

General Description

125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz.

Top view 2 1 BLF2022-125 PINNING - SOT634A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION 3 MBL367 Fig.1 Simplified outline.

QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit;

Key Features

  • Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A.
  • Output power = 20 W (AV).
  • Gain = 12 dB.
  • Efficiency = 19%.
  • ACPR =.
  • 42 dBc at 3.84 MHz.
  • Easy power control.
  • Excellent ruggedness.
  • High power gain.
  • Excellent thermal stability.
  • Designed for broadband operation (2000 to 2200 MHz).
  • Internally matched for ease of use.

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BLF2022-125 Distributor