BLF2022-125 Datasheet | NXP Semiconductors

.. DISCRETE SEMICONDUCTORS DATA SHEET M3D792 BLF2022-125 UHF power LDMOS transistor Objective specification Supersedes data of 2002 April 02 2003 Mar 07 .. Philips Semiconductors Objective specification UHF power LDMOS transistor Features - Typical W-CDMA performance at a supply voltage of 28 V and IDQ of 1 A - Output power = 20 W (AV) - Gain = 12 d B - Efficiency = 19% - ACPR = - 42 d Bc at 3.84 MHz - Easy power control - Excellent ruggedness - High power gain - Excellent thermal stability - Designed for broadband operation (2000 to 2200 MHz) - Internally matched for ease of use. APPLICATIONS - RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 to 2200 MHz frequency range DESCRIPTION 125 W LDMOS power transistor for base station applications at frequencies from 2000 to 2200 MHz. Top view 2 1 PINNING - SOT634A PIN 1 2 3 drain gate source, connected to flange DESCRIPTION MBL367 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon source test circuit; single-carrier W-CDMA test model 1, 64 channels, 3.84 MHz channel bandwidth; Peak/Average = 9.8 d B at 0.01% probability on CCDF. MODE OF OPERATION single carrier W-CDMA f (MHz) 2110 to 2170 VDS (V) 28 PL avg (W) 30 Gp (d B) typ 12 ηD (%) typ 19 dim (d Bc) typ -...