Datasheet4U Logo Datasheet4U.com

BLF225 - VHF power MOS transistor

Description

Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range.

The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap.

All leads are isolated from the flange.

Features

  • Easy power control.
  • Good thermal stability.
  • Withstands full load mismatch.

📥 Download Datasheet

Datasheet preview – BLF225

Datasheet Details

Part number BLF225
Manufacturer NXP
File Size 69.98 KB
Description VHF power MOS transistor
Datasheet download datasheet BLF225 Datasheet
Additional preview pages of the BLF225 datasheet.
Other Datasheets by NXP

Full PDF Text Transcription

Click to expand full text
DISCRETE SEMICONDUCTORS DATA SHEET BLF225 VHF power MOS transistor Product specification September 1992 Philips Semiconductors Product specification VHF power MOS transistor FEATURES • Easy power control • Good thermal stability • Withstands full load mismatch. DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the VHF frequency range. The transistor is encapsulated in a 4-lead, SOT123 flange envelope, with a ceramic cap. All leads are isolated from the flange. PINNING - SOT123 PIN 1 2 3 4 drain source gate source DESCRIPTION g MBB072 BLF225 PIN CONFIGURATION k, halfpage 1 4 d s 2 3 MSB057 Fig.1 Simplified outline and symbol. CAUTION The device is supplied in an antistatic package.
Published: |