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BLF4G10S-120, BLF4G10-120 Datasheet - NXP

BLF4G10S-120 UHF power LDMOS transistor

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%).

BLF4G10S-120 Features

* s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 =

* 61 dBc (typ) x ACPR600 =

* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ru

BLF4G10-120_PhilipsSemiconductors.pdf

This datasheet PDF includes multiple part numbers: BLF4G10S-120, BLF4G10-120. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

BLF4G10S-120, BLF4G10-120

Manufacturer:

NXP ↗

File Size:

155.94 KB

Description:

Uhf power ldmos transistor.

Note:

This datasheet PDF includes multiple part numbers: BLF4G10S-120, BLF4G10-120.
Please refer to the document for exact specifications by model.

BLF4G10S-120 Distributor

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BLF4G10S-120 BLF4G10-120 UHF power LDMOS transistor NXP