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BLF4G10S-120 Datasheet - NXP

UHF power LDMOS transistor

BLF4G10S-120 Features

* s Typical GSM EDGE performance at frequency of 960 MHz, a supply voltage of 28 V and an IDq of 850 mA: x Load power = 48 W (AV) x Gain = 19 dB (typ) x Efficiency = 40 % (typ) x ACPR400 =

* 61 dBc (typ) x ACPR600 =

* 72 dBc (typ) x EVMrms = 1.5 % (typ) s Easy power control s Excellent ru

BLF4G10S-120 General Description

120 W LDMOS power transistor for base station applications at frequencies from 800 MHz to 1000 MHz. Table 1: Typical performance RF performance at Th = 25 °C in a common base class-AB test circuit. Mode of operation CW 2-tone [1] [2] f (MHz) VDS (V) PL (W) 120 48 (AV) Gp (dB) (typ) 19 19 ηD (%).

BLF4G10S-120 Datasheet (155.94 KB)

Preview of BLF4G10S-120 PDF

Datasheet Details

Part number:

BLF4G10S-120

Manufacturer:

NXP ↗

File Size:

155.94 KB

Description:

Uhf power ldmos transistor.
www.DataSheet4U.com BLF4G10-120; BLF4G10S-120 UHF power LDMOS transistor Rev. 01 10 January 2006 Product data sheet 1. Product profile 1.1 .

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BLF4G10S-120 UHF power LDMOS transistor NXP

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