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BLS2933-100 Datasheet - NXP

Microwave power LDMOS transistor

BLS2933-100 Features

* I I I I I I Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use 1.3 Applications I S-band radar applications Philips Semiconductors BLS2933-100 Microwave power LDMOS

BLS2933-100 General Description

100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit. Mode of operation class AB f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W.

BLS2933-100 Datasheet (106.42 KB)

Preview of BLS2933-100 PDF

Datasheet Details

Part number:

BLS2933-100

Manufacturer:

NXP ↗

File Size:

106.42 KB

Description:

Microwave power ldmos transistor.
www.DataSheet4U.com BLS2933-100 Microwave power LDMOS transistor Rev. 01 1 August 2006 Product data sheet 1. Product profile 1.1 General de.

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BLS2933-100 Microwave power LDMOS transistor NXP

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