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BLS2933-100 Datasheet Microwave power LDMOS transistor

Manufacturer: NXP Semiconductors

General Description

100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.

Table 1: Typical performance tp = 200 µs;

δ = 12 %;

Overview

www.DataSheet4U.com BLS2933-100 Microwave power LDMOS transistor Rev.

01 — 1 August 2006 Product data sheet 1.

Product profile 1.

Key Features

  • I I I I I I Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use 1.3.