BLS3135-10 - Microwave power transistor

Datasheet Summary

Description

1 APPLICATIONS

Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range.

Features

Suitable for short and medium pulse.

NXP

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Datasheet Details

Part number	BLS3135-10
Manufacturer	NXP
File Size	66.12 KB
Description	Microwave power transistor
Datasheet	BLS3135-10 Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product speciﬁcation 2000 Feb 01 Philips Semiconductors Product speciﬁcation Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. handbook, halfpage BLS3135-10 PINNING - SOT445C PIN 1 2 3 collector emitter base; connected to ﬂange DESCRIPTION 1 APPLICATIONS • Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range.

Published: Mar 23, 2005 |