BLS3135-10 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor Features - Suitable for short and medium pulse applications - Internal input and output matching networks for an easy circuit design - Emitter ballasting resistors improve ruggedness - Gold metallization ensures excellent reliability - Interdigitated emitter-base structure provides high emitter efficiency - Multicell geometry improves power sharing and reduces thermal resistance. handbook, halfpage PINNING - SOT445C PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION APPLICATIONS - mon base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range. 2 3 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the mon base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon base class-C test circuit. MODE OF OPERATION Pulsed class-C f (GHz) 3.1 to 3.5 VCB (V) 40 PL (W) ≥10 Top view MBK132 Fig.1 Simplified outline. Gp (d B) typ. 9 ηC (%) typ. 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 2000 Feb 01 Philips...