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BLS3135-10 - Microwave power transistor

General Description

1 APPLICATIONS

Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range.

Key Features

  • Suitable for short and medium pulse.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. handbook, halfpage BLS3135-10 PINNING - SOT445C PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION 1 APPLICATIONS • Common base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range.