Datasheet Details
| Part number | BLS3135-10 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 66.12 KB |
| Description | Microwave power transistor |
| Datasheet | BLS3135-10_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS3135-10 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power.
| Part number | BLS3135-10 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 66.12 KB |
| Description | Microwave power transistor |
| Datasheet | BLS3135-10_PhilipsSemiconductors.pdf |
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1 APPLICATIONS • mon base class-C pulsed power amplifier for radar applications in the 3.1 to 3.5 GHz range.
2 3 DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the mon base connected to the flange.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon base class-C test circuit.
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