BLS2731-110 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor Features - Suitable for short and medium pulse applications - Internal input and output matching networks for an easy circuit design - Emitter ballasting resistors improve ruggedness - Gold metallization ensures excellent reliability - Interdigitated emitter-base structure provides high emitter efficiency - Multicell geometry improves power sharing and reduces thermal resistance. dbook, halfpage PINNING - SOT423A PIN 1 2 3 emitter base; connected to flange DESCRIPTION collector APPLICATIONS - mon base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the mon base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon base class-C test circuit. MODE OF OPERATION Pulsed class-C f (GHz) 2.7 to 3.1 VCB (V) 40 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. PL (W) >110 Gp (d B) >7 ηC (%) >35 3 2 3 MBK052 Fig.1 Simplified outline. 1998 Jan 30 Philips Semiconductors Product specification Microwave power transistor LIMITING VALUES In accordance with the...