Datasheet Details
| Part number | BLS2731-110 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 85.97 KB |
| Description | Microwave power transistor |
| Datasheet | BLS2731-110_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product specification Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product specification Microwave power.
| Part number | BLS2731-110 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 85.97 KB |
| Description | Microwave power transistor |
| Datasheet | BLS2731-110_PhilipsSemiconductors.pdf |
|
|
|
collector 1 APPLICATIONS • mon base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT423A) with the mon base connected to the flange.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon base class-C test circuit.
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