BLS2731-110 - Microwave power transistor

Datasheet Summary

Description

collector 1 APPLICATIONS

Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.

Features

Suitable for short and medium pulse.

NXP

📥 Download Datasheet

BLS2731-110 Microwave power transistor by NXP - Datasheet Preview — Datasheet preview – BLS2731-110

Datasheet Details

Part number	BLS2731-110
Manufacturer	NXP
File Size	85.97 KB
Description	Microwave power transistor
Datasheet	BLS2731-110 Datasheet
Additional preview pages of the BLS2731-110 datasheet.

📁 Similar Datasheet

BLS65R165 - Power MOSFET (BELLING)
BLS6G2731-120 - LDMOS S-band radar power transistor (Ampleon)
BLS6G2731-6G - LDMOS S-Band radar power transistor (Ampleon)
BLS6G2731-6G - LDMOS S-Band radar power transistor (NXP Semiconductors)
BLS6G2731S-120 - LDMOS S-band radar power transistor (Ampleon)
BLS6G2735L-30 - S-band LDMOS transistor (Ampleon)
BLS6G2735LS-30 - S-band LDMOS transistor (Ampleon)
BLS6G2933S-130 - LDMOS S-band radar power transistor (Ampleon)
BLS6G2933S-130 - LDMOS S-band radar power transistor (NXP Semiconductors)
BLS6G3135-120 - LDMOS S-Band radar power transistor (Ampleon)

Other Datasheets by NXP

BLS2731-10 - Microwave power transistor
BLS2731-20 - Microwave power transistor
BLS2731-50 - Microwave power transistor
BLS2933-100 - Microwave power LDMOS transistor
BLS3135-10 - Microwave power transistor
BLS3135-20 - Microwave power transistor
BLS3135-50 - Microwave power transistor
BLS3135-65 - Microwave power transistor

Full PDF Text Transcription

Click to expand full text

DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-110 Microwave power transistor Product speciﬁcation Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product speciﬁcation Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance.

Published: Mar 23, 2005 |