BLS2731-50 - Microwave power transistor

NXP Semiconductors

General Description

1 APPLICATIONS

Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.

Key Features

Suitable for short and medium pulse.

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BLS2731-50 microwave power transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BLS2731-50
Manufacturer	NXP Semiconductors
File Size	68.81 KB
Description	Microwave power transistor
Datasheet	BLS2731-50 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-50 Microwave power transistor Product speciﬁcation Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product speciﬁcation Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance.