BLS2731-50 - Microwave power transistor

Datasheet Summary

Description

1 APPLICATIONS

Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.

Features

Suitable for short and medium pulse.

NXP

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Datasheet Details

Part number	BLS2731-50
Manufacturer	NXP
File Size	68.81 KB
Description	Microwave power transistor
Datasheet	BLS2731-50 Datasheet
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DISCRETE SEMICONDUCTORS DATA SHEET BLS2731-50 Microwave power transistor Product speciﬁcation Supersedes data of 1997 Nov 05 1998 Jan 30 Philips Semiconductors Product speciﬁcation Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance.

Published: Mar 23, 2005 |