BLS2933-100 Datasheet | NXP Semiconductors

.. Microwave power LDMOS transistor Rev. 01 - 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit. Mode of operation class AB f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 100 Gp (d B) 8 ηD (%) 40 IDq (m A) 20 CAUTION This device is sensitive to Electro Static Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I I I I I Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use 1.3 Applications I S-band radar applications Philips Semiconductors Microwave power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Symbol 2 3 sym112 [1] connected to flange 3. Ordering information Table 3. Ordering information Package Name BLS2933-100 Description flanged LDMOST ceramic package; 2 mounting holes; 2 leads Version SOT502A Type number 4. Limiting values Table 4. Limiting values In accordance with the...