BLS2933-100 Description
100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Typical performance tp = 200 µs; in a class-AB production test circuit.
BLS2933-100 is Microwave power LDMOS transistor manufactured by NXP Semiconductors.
| Part Number | Description |
|---|---|
| BLS2731-10 | Microwave power transistor |
| BLS2731-110 | Microwave power transistor |
| BLS2731-20 | Microwave power transistor |
| BLS2731-50 | Microwave power transistor |
| BLS3135-10 | Microwave power transistor |
100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Typical performance tp = 200 µs; in a class-AB production test circuit.