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BLS2933-100 - Microwave power LDMOS transistor

Description

100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range.

Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit.

Features

  • I I I I I I Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.3 GHz) Internally matched for ease of use 1.3.

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Datasheet Details

Part number BLS2933-100
Manufacturer NXP
File Size 106.42 KB
Description Microwave power LDMOS transistor
Datasheet download datasheet BLS2933-100 Datasheet
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www.DataSheet4U.com BLS2933-100 Microwave power LDMOS transistor Rev. 01 — 1 August 2006 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor (at a supply voltage of 32 V) for S-band radar applications in the 2.9 GHz to 3.3 GHz frequency range. Table 1: Typical performance tp = 200 µs; δ = 12 %; Tcase = 25 °C; in a class-AB production test circuit. Mode of operation class AB f (GHz) 2.9 to 3.3 VDS (V) 32 PL (W) 100 Gp (dB) 8 ηD (%) 40 IDq (mA) 20 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I I I I I Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband operation (2.9 GHz to 3.
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