BLS2731-20 - Microwave power transistor

Datasheet Summary

Description

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445C) with the common base connected to the flange.

Features

Suitable for short and medium pulse.

NXP

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Datasheet Details

Part number	BLS2731-20
Manufacturer	NXP
File Size	74.35 KB
Description	Microwave power transistor
Datasheet	BLS2731-20 Datasheet
Additional preview pages of the BLS2731-20 datasheet.

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DISCRETE SEMICONDUCTORS DATA SHEET M3D324 BLS2731-20 Microwave power transistor Product speciﬁcation Supersedes data of 1998 Mar 06 1998 Nov 25 Philips Semiconductors Product speciﬁcation Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance. APPLICATIONS • Common base class-C pulsed power amplifiers for radar applications in the 2.7 to 3.1 GHz band.

Published: Mar 23, 2005 |