BLS3135-20 Description
1 APPLICATIONS mon base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz range. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the mon base connected to the flange. 3 2 3 MBK051 Fig.1 Simplified outline.
BLS3135-20 Key Features
- Suitable for short and medium pulse
BLS3135-20 Applications
- Internal input and output matching networks for an easy circuit design