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BLS3135-20 Datasheet Microwave Power Transistor

Manufacturer: NXP Semiconductors

Overview: DISCRETE SEMICONDUCTORS DATA SHEET halfpage M3D259 BLS3135-20 Microwave power transistor Product specification 2000 Feb 01 Philips Semiconductors Product specification Microwave power.

General Description

1 APPLICATIONS • mon base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz range.

DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the mon base connected to the flange.

3 2 3 MBK051 Fig.1 Simplified outline.

Key Features

  • Suitable for short and medium pulse.

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