Datasheet Details
| Part number | BLS3135-50 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 62.21 KB |
| Description | Microwave power transistor |
| Datasheet | BLS3135-50_PhilipsSemiconductors.pdf |
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Overview: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1998 Apr 06 1999 Aug 16 Philips Semiconductors Product specification Microwave power.
| Part number | BLS3135-50 |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 62.21 KB |
| Description | Microwave power transistor |
| Datasheet | BLS3135-50_PhilipsSemiconductors.pdf |
|
|
|
1 APPLICATIONS • mon base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band.
DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the mon base connected to the flange.
QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon base class-C test circuit.
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