BLS3135-50 Description
1 APPLICATIONS mon base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the mon base connected to the flange. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon base class-C test circuit.
BLS3135-50 Key Features
- Suitable for short and medium pulse
BLS3135-50 Applications
- Internal input and output matching networks for an easy circuit design