BLS3135-65 - Microwave power transistor

NXP Semiconductors

General Description

1 APPLICATIONS

Common base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band.

Key Features

Suitable for short and medium pulse.

📥 Download Datasheet

BLS3135-65 microwave power transistor by NXP Semiconductors - Datasheet Preview

Datasheet Details

Part number	BLS3135-65
Manufacturer	NXP Semiconductors
File Size	68.78 KB
Description	Microwave power transistor
Datasheet	BLS3135-65 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
BLS65R165	Power MOSFET	BELLING
BLS6G2731-120	LDMOS S-band radar power transistor	Ampleon
BLS6G2731-6G	LDMOS S-Band radar power transistor	Ampleon
BLS6G2731-6G	LDMOS S-Band radar power transistor	NXP Semiconductors
BLS6G2731S-120	LDMOS S-band radar power transistor	Ampleon

Other Datasheets by NXP Semiconductors

Part Number	Description
BLS3135-10	Microwave power transistor
BLS3135-20	Microwave power transistor
BLS3135-50	Microwave power transistor
BLS2731-10	Microwave power transistor
BLS2731-110	Microwave power transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-65 Microwave power transistor Product speciﬁcation Supersedes data of 1999 May 01 1999 Aug 16 Philips Semiconductors Product speciﬁcation Microwave power transistor FEATURES • Suitable for short and medium pulse applications • Internal input and output matching networks for an easy circuit design • Emitter ballasting resistors improve ruggedness • Gold metallization ensures excellent reliability • Interdigitated emitter-base structure provides high emitter efficiency • Multicell geometry improves power sharing and reduces thermal resistance.