BLS3135-65 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-65 Microwave power transistor Product specification Supersedes data of 1999 May 01 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor Features - Suitable for short and medium pulse applications - Internal input and output matching networks for an easy circuit design - Emitter ballasting resistors improve ruggedness - Gold metallization ensures excellent reliability - Interdigitated emitter-base structure provides high emitter efficiency - Multicell geometry improves power sharing and reduces thermal resistance. handbook, halfpage PINNING - SOT422A PIN 1 2 3 collector emitter base; connected to flange DESCRIPTION APPLICATIONS - mon base class-C pulsed power amplifiers for radar applications in the 3.1 to 3.5 GHz band. DESCRIPTION NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT422A) with the mon base connected to the flange. 3 2 3 MBK051 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Th = 25 °C in a mon base class-C test circuit. MODE OF OPERATION Pulsed, class-C f (GHz) 3.1 to 3.5 VCB (V) 40 PL (W) 65 Gp (d B) ≥7 ηC (%) ≥35 WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the Be O disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste. 1999 Aug 16 Philips Semiconductors Product specification Microwave power transistor LIMITING VALUES In accordance with the...