Datasheet Summary
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LDMOS S-band radar power transistor
Rev. 01
- 26 July 2010 Objective data sheet
1. Product profile
1.1 General description
130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.
Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 μs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of operation pulsed RF f (GHz) 2.7 to 3.1 VDS (V) 32 PL (W) 130 Gp (dB) 12.5 ηD (%) 47 tr (ns) 20 tf (ns) 6
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling.
1.2 Features and benefits
- Typical pulsed RF...