Datasheet4U.com

BLS6G2731S-130 - LDMOS S-band radar power transistor

Product Overview

NXP

📥 Download Datasheet

BLS6G2731S-130 LDMOS S-band radar power transistor by NXP - Datasheet Preview — Datasheet preview – BLS6G2731S-130

Datasheet Details

Part number	BLS6G2731S-130
Manufacturer	NXP
File Size	243.93 KB
Description	LDMOS S-band radar power transistor
Datasheet	BLS6G2731S-130 Datasheet
Additional preview pages of the BLS6G2731S-130 datasheet.

Product details

Description

130 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range.

Features

Typical pulsed RF performance at a frequency of 2.7 GHz to 3.1 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 μs with δ of 10 %: Output power = 130 W Power gain = 12.5 dB Efficiency = 47 %.
Easy power control.
Integrated ESD protection.
High flexibility with respect to pulse formats.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (2.7 GHz to 3.1 GHz).

📁 Similar Datasheet

BLS6G2731S-120 - LDMOS S-band radar power transistor (Ampleon)
BLS6G2731-120 - LDMOS S-band radar power transistor (Ampleon)
BLS6G2731-6G - LDMOS S-Band radar power transistor (Ampleon)
BLS6G2735L-30 - S-band LDMOS transistor (Ampleon)
BLS6G2735LS-30 - S-band LDMOS transistor (Ampleon)
BLS6G2933S-130 - LDMOS S-band radar power transistor (Ampleon)
BLS6G3135-120 - LDMOS S-Band radar power transistor (Ampleon)
BLS6G3135-20 - LDMOS S-Band radar power transistor (Ampleon)

Other Datasheets by NXP

BLS6G2933P-200 - LDMOS S-Band radar pallet amplifier
BLS2731-10 - Microwave power transistor
BLS2731-110 - Microwave power transistor
BLS2731-20 - Microwave power transistor
BLS2731-50 - Microwave power transistor
BLS2933-100 - Microwave power LDMOS transistor

Published: Aug 19, 2010 |