BLS6G2933P-200 Key Features
- Easy power control Integrated ESD protection Excellent ruggedness Excellent thermal stability Designed for broadband ope
- Part: BLS6G2933P-200
- Manufacturer: NXP Semiconductors (official site)
- Size: 130.45 KB
Related NXP Semiconductors Datasheets
| Part Number | Description |
|---|---|
| BLS6G2731-120 | LDMOS S-band Radar Power Transistor |
| BLS6G2731S-120 | LDMOS S-band Radar Power Transistor |
| BLS6G2731S-130 | LDMOS S-band radar power transistor |
| BLS6G2735L-30 | S-band LDMOS transistor |
| BLS6G2735LS-30 | S-band LDMOS transistor |
BLS6G2933P-200 Description
200 W LDMOS amplifier pallet intended for radar applications in the 2.9 GHz to 3.3 GHz range. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB test circuit. Mode of operation f (GHz) class-AB;.