BLV90 transistor equivalent, uhf power transistor.
BLV90
* diffused emitter-ballasting resistors for an optimum temperature profile.
* gold metallization ensures excellent reliability.
* the device can be ap.
These products are not designed for use in life support appliances, devices, or systems where malfunction of these produ.
NPN silicon planar epitaxial transistor designed for use in mobile radio transmitters in the 900 MHz band. FEATURES
BLV90
* diffused emitter-ballasting resistors for an optimum temperature profile.
* gold metallization ensures excellent rel.
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