* BLV93
* multi-base structure and emitter-ballasting resistors for an optimum temperature profile
* internal input matching to achieve an optimum wideband capability and high power gain
* gold metallization ensures excellent reliability. The transistor has a 6-lead flange en
BLV93
63.92 KB
Uhf power transistor.
DISCRETE SEMICONDUCTORS DATA SHEET BLV93 UHF power transistor Product speciļ¬cation March 1993 Philips Semiconductors Product speciļ¬cation UHF pow.
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