BLV92
Description
N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 900 MHz munications band.
Key Features
- multi-base structure and emitter-ballasting resistors for an optimum temperature profile
- internal input matching to achieve an optimum wideband capability and high power gain
- Measured under pulse conditions: tp = 50 µs; δ < 1%. V(BR)CBO V(BR)CEO V(BR)EBO ICES ESBR hFE fT Cc Cre Ccf > > > < > > typ. typ. typ. typ
