BLV935 transistor equivalent, uhf power transistor.
* Emitter ballasting resistors for an optimum temperature profile
* Gold metallization ensures excellent reliability
* Internal input matching to achieve high.
* Base stations in the 820 to 980 MHz range.
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BLV935
DESCRIPTION NPN silicon planar epitaxial transistor int.
NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap. All leads are iso.
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