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NXP Semiconductors Electronic Components Datasheet

BLW90 Datasheet

UHF power transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW90
UHF power transistor
Product specification
August 1986


NXP Semiconductors Electronic Components Datasheet

BLW90 Datasheet

UHF power transistor

No Preview Available !

Philips Semiconductors
UHF power transistor
Product specification
BLW90
DESCRIPTION
N-P-N silicon planar epitaxial
transistor suitable for transmitting
applications in class-A, B or C in the
u.h.f. and v.h.f. range for a nominal
supply voltage of 28 V. The transistor
is resistance stabilized and is
guaranteed to withstand infinite
VSWR at rated output power. High
reliability is ensured by a gold
sandwich metallization.
The transistor is housed in a 14"
capstan envelope with a ceramic cap.
All leads are isolated from the stud.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C in an unneutralized common-emitter class-B circuit
MODE OF OPERATION
VCE
V
f
MHz
PL
W
c.w.
28 470
4
Gp
dB
> 11
η
%
> 55
PIN CONFIGURATION
handbook, halfpage
4
1
3
PINNING - SOT122A.
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
Top view
2
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2


Part Number BLW90
Description UHF power transistor
Maker NXP
Total Page 11 Pages
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