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NXP Semiconductors Electronic Components Datasheet

BLW96 Datasheet

HF/VHF power transistor

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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW96
HF/VHF power transistor
Product specification
August 1986


NXP Semiconductors Electronic Components Datasheet

BLW96 Datasheet

HF/VHF power transistor

No Preview Available !

Philips Semiconductors
HF/VHF power transistor
Product specification
BLW96
DESCRIPTION
N-P-N silicon planar epitaxial
transistor intended for use in class-A,
AB and B operated high power
industrial and military transmitting
equipment in the h.f. and v.h.f. band.
The transistor presents excellent
performance as a linear amplifier in
s.s.b. applications. It is resistance
stabilized and is guaranteed to
withstand severe load mismatch
conditions. Transistors are supplied
in matched hFE groups.
The transistor has a 12" flange
envelope with a ceramic cap. All
leads are isolated from the flange.
QUICK REFERENCE DATA
R.F. performance up to Th = 25 °C
MODE OF
OPERATION
s.s.b. (class-AB)
c.w. (class-B)
s.s.b. (class-A)
VCE
f
V MHz
PL
W
Gp η d3 d5
dB % dB dB
50 1,6 28 25 200 (P.E.P.) > 13,5 > 40(1) < −30 < −30
50 108
200
typ. 6,5 typ. 67
40 28
50 (P.E.P.) typ. 19
typ. 40 < −40
IC(ZS)
(IC)
A
0,1
(6)
(4)
Note
1. ηdt at 200 W P.E.P.
PIN CONFIGURATION
handbook, halfpage 4
3
PINNING - SOT121B.
PIN DESCRIPTION
1 collector
2 emitter
3 base
4 emitter
12
MLA876
Fig.1 Simplified outline. SOT121B.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely
safe provided that the BeO disc is not damaged.
August 1986
2


Part Number BLW96
Description HF/VHF power transistor
Maker NXP
Total Page 14 Pages
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