BLW97 Datasheet | NXP Semiconductors

DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power industrial and military transmitting equipment in the h.f. band. The transistor offers excellent performance as a linear amplifier in s.s.b. applications. It is resistance stabilized and is made to withstand severe load-mismatch conditions. All leads are isolated from the flange. The transistors are supplied in matched hFE groups. QUICK REFERENCE DATA R.F. performance up to Th = 25 °C MODE OF OPERATION s.s.b....