* diffused emitter ballasting resistors for an optimum temperature profile;
* gold sandwich metallization ensures excellent reliability. The transistor has a 1⁄4" capstan envelope with ceramic cap. All leads are isolated from the stud. BLW98 QUICK REFERENCE DATA R.F. performance i
BLW98
80.29 KB
Uhf linear power transistor.
DISCRETE SEMICONDUCTORS
DATA SHEET
BLW98 UHF linear power transistor
Product specification August 1986
Philips Semiconductors
Product specification
.
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BLW90 UHF power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF po.
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Product specification August 1986
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HF/.
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BLW31 - NPN SILICON RF POWER TRANSISTOR
(Advanced Semiconductor)
BLW31
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI BLW31 is an NPN power transistor, designed 108-175 MHz applications. The device utilizes d.
