* Low threshold voltage
* High-speed switching
* No secondary breakdown
* Direct interface to C-MOS, TTL, etc. APPLICATIONS
* Power management
* B.

* Power management
* Battery powered applications e.g. cellular phones
* General purpose switch. handbook, h.

drain drain gate source drain drain 6 5 4 d DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package. 1 2 3 MAM396 g s CAUTION The device is supplied in an antistatic package. The gate-source input must be protected again.

BSH201

BSH202

BSH203

BSH205

BSH205G2

BSH206

BSH207

BSH101

BSH102

BSH103

BSH104

BSH105

BSH106

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