BSH205G2 mosfet equivalent, p-channel trench mosfet.
* Low threshold voltage
* Low on-state resistance
* Trench MOSFET technology
* Enhanced power dissipation capability of 890 mW
* AEC-Q101 qualified
3.
* Relay driver
* High-speed line driver
* High-side loadswitch
* Switching circuits
4. Quick reference .
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2. Features and benefits
* Low threshold voltage
* Low on-state resistance
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