BSH205G2 Description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
BSH205G2 Key Features
- Low threshold voltage
- Low on-state resistance
- Trench MOSFET technology
- Enhanced power dissipation capability of 890 mW
- AEC-Q101 qualified