BU2722DF Datasheet | NXP Semiconductors

DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope. Intended for use in horizontal deflection circuits of high resolution monitors. Suitable for operation up to 64 k Hz, designed to withstand VCES pulses up to 1700 V. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP. 4.5 1.9 MAX. 1700 825 10 25 45 1 2.25 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 4.5 A; IB = 1.0 A ICM = 4.5 A; IB(end) = 0.7 A PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b Rbe case isolated 3 e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value 1 Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1700 825 10 25 10 20 150 20 45 150 150 UNIT V V A A A A m A A W ˚C ˚C average over any 20 ms period Ths ≤ 25 ˚C ESD LIMITING VALUES SYMBOL VC PARAMETER CONDITIONS MIN. MAX. 10 UNIT k V Electrostatic discharge capacitor voltage Human body model (250 p F, 1.5 kΩ) 1 Turn-off current. November 1995 Rev 1.000 Philips Semiconductors Preliminary specification Silicon Diffused Power Transistor THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to heatsink Junction to ambient CONDITIONS without heatsink pound with heatsink pound in free air TYP. 35 MAX. 3.7...