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BUK7107-40ATC Datasheet

(BUK7107-40ATC / BUK7907-40ATC) TrenchPLUS standard level FET

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BUK71/7907-40ATC
TrenchPLUS standard level FET
Rev. 01 — 9 August 2002
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
TrenchMOS™ technology, featuring very low on-state resistance, TrenchPLUS
diodes for clamping, (ESD) protection and temperature sensing.
Product availability:
BUK7107-40ATC in SOT426 (D2-PAK)
BUK7907-40ATC in SOT263B (TO-220AB).
1.2 Features
s Integrated temperature sensor
s ESD and overvoltage protection
1.3 Applications
s Variable Valve Timing for engines
s Q101 compliant
s RDSon = 5.8 m(typ).
s Electrical Power Assisted Steering.
1.4 Quick reference data
s VDS 40 V
s ID 75 A
s VF = 658 mV (typ)
s SF = 1.54 mV/K (typ).
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 anode (a)
mb
mb
da
3 drain (d)
4 cathode (k)
5 source (s)
12 345
g
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D2-PAK)
15
MBL263
SOT263B (TO-220AB)
MBL306
sk


NXP Semiconductors Electronic Components Datasheet

BUK7107-40ATC Datasheet

(BUK7107-40ATC / BUK7907-40ATC) TrenchPLUS standard level FET

No Preview Available !

Philips Semiconductors
BUK71/7907-40ATC
TrenchPLUS standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGS
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
IDG = 250 µA
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
[1]
[1]
[2]
[3]
IDM
Ptot
IDG(CL)
IGS(CL)
peak drain current
total power dissipation
drain-gate clamping current
gate-source clamping current
Visol(FET-TSD) FET to temperature sense diode
isolation voltage
Tstg storage temperature
Tj junction temperature
Source-drain diode
IDR reverse drain current
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Tmb = 25 °C; Figure 1
tp = 5 ms; δ = 0.01
continuous
tp = 5 ms; δ = 0.01
[3]
Tmb = 25 °C
[2]
[3]
IDRM
Clamping
EDS(CL)S
peak reverse drain current
non-repetitive drain-source clamping
energy
Electrostatic Discharge
Vesd electrostatic discharge voltage; pins
1,3,5
Tmb = 25 °C; pulsed; tp 10 µs
unclamped inductive load; ID = 75 A;
VDS 40 V; VGS = 10 V; RGS = 10 k;
starting Tj = 25 °C
Human Body Model; C = 100 pF;
R = 1.5 k
Min
-
-
-
-
-
-
-
-
-
-
-
-
55
55
-
-
-
-
[1] Voltage is limited by clamping
[2] Current is limited by power dissipation chip rating
[3] Continuous current is limited by package.
Max Unit
40 V
40 V
±20 V
140 A
75 A
75 A
560 A
272
50
10
50
±100
W
mA
mA
mA
V
+175 °C
+175 °C
140 A
75 A
560 A
1.4 J
6 kV
9397 750 09874
Product data
Rev. 01 — 9 August 2002
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
2 of 16


Part Number BUK7107-40ATC
Description (BUK7107-40ATC / BUK7907-40ATC) TrenchPLUS standard level FET
Maker NXP
Total Page 16 Pages
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