900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




NXP Semiconductors Electronic Components Datasheet

BUK714R1-40BT Datasheet

(BUK714R1-40BT / BUK794R1-40BT) TrenchMOS standard level FET

No Preview Available !

www.DataSheet4U.com
BUK71/794R1-40BT
TrenchMOS™ standard level FET
Rev. 01 — 4 November 2004
Product data
1. Product profile
1.1 Description
N-channel enhancement mode field-effect power transistor in a plastic package using
Philips High-Performance Automotive (HPA) TrenchMOS™ technology. The devices
include TrenchPLUS diodes for over-temperature protection.
Product availability:
BUK714R1-40BT in SOT426 (D2-PAK)
BUK794R1-40BT in SOT263B (TO-220AB).
1.2 Features
s Integrated temperature sensor
s Very low on-state resistance
s Q101 compliant
s 175 °C rated.
1.3 Applications
s Electrical Power Assisted Steering
s Motors, lamps and solenoids
s 12 V loads
s General purpose power switching.
1.4 Quick reference data
s RDSon = 3.4 m(typ)
s VDS 40 V
s ID 75 A
s Ptot 272 W.
2. Pinning information
Table 1: Pinning - SOT426 and SOT263B, simplified outline and symbol
Pin Description
Simplified outline
Symbol
1 gate (g)
2 anode (a)
mb
mb
3 drain (d)
4 cathode (k)
5 source (s)
12 345
g
mb mounting base;
connected to drain (d)
Front view
MBK127
SOT426 (D2-PAK)
15
MBL263
SOT263B (TO-220AB)
03nm72
d
s
a
k


NXP Semiconductors Electronic Components Datasheet

BUK714R1-40BT Datasheet

(BUK714R1-40BT / BUK794R1-40BT) TrenchMOS standard level FET

No Preview Available !

Philips Semiconductors
BUK71/794R1-40BT
TrenchMOS™ standard level FET
3. Limiting values
Table 2: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
VDS
VDGR
VGS
ID
drain-source voltage (DC)
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
RGS = 20 k
Tmb = 25 °C; VGS = 10 V;
Figure 2 and 3
IDM peak drain current
Ptot total power dissipation
Tstg storage temperature
Tj junction temperature
Source-drain diode
IDR reverse drain current (DC)
Tmb = 100 °C; VGS = 10 V; Figure 2
Tmb = 25 °C; pulsed; tp 10 µs;
Figure 3
Tmb = 25 °C; Figure 1
Tmb = 25 °C
IDRM
peak reverse drain current
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source avalanche
energy
Electrostatic discharge
Vesd Electrostatic discharge voltage; pins
1,3,5
Tmb = 25 °C; pulsed; tp 10 µs
unclamped inductive load; ID = 75 A;
VDS 40 V; VGS = 10 V; RGS = 50 ;
starting Tmb = 25 °C
Human Body Model; C = 100 pF;
R = 1.5 k
Min
-
-
-
[1] -
[2] -
[2] -
-
-
55
55
[1] -
[2] -
-
-
-
[1] Current is limited by power dissipation chip rating.
[2] Continuous current is limited by package.
Max Unit
40 V
40 V
±20 V
187 A
75 A
75 A
748 A
272
+175
+175
W
°C
°C
187 A
75 A
748 A
1.5 J
4 kV
9397 750 13954
Product data
Rev. 01 — 4 November 2004
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
2 of 15


Part Number BUK714R1-40BT
Description (BUK714R1-40BT / BUK794R1-40BT) TrenchMOS standard level FET
Maker NXP
Total Page 15 Pages
PDF Download

BUK714R1-40BT Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 BUK714R1-40BT (BUK714R1-40BT / BUK794R1-40BT) TrenchMOS standard level FET
NXP





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy