Datasheet4U Logo Datasheet4U.com

BUK856-400IZ Datasheet - NXP

Insulated Gate Bipolar Transistor Protected Logic-Level IGBT

BUK856-400IZ General Description

Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener diodes providing active collector voltage clamping and ESD protection up to 2 kV. BUK856-400 IZ QUICK REFERENCE DATA SYMBOL PA.

BUK856-400IZ Datasheet (81.43 KB)

Preview of BUK856-400IZ PDF

Datasheet Details

Part number:

BUK856-400IZ

Manufacturer:

NXP ↗

File Size:

81.43 KB

Description:

Insulated gate bipolar transistor protected logic-level igbt.

📁 Related Datasheet

BUK856-800A Insulated Gate Bipolar Transistor IGBT (NXP)

BUK854-800A Insulated Gate Bipolar Transistor IGBT (NXP)

BUK866-400IZ Insulated Gate Bipolar Transistor Protected Logic-Level IGBT (NXP)

BUK100-50DL PowerMOS transistor Logic level TOPFET (NXP)

BUK100-50GL PowerMOS transistor Logic level TOPFET (NXP)

BUK100-50GS PowerMOS transistor TOPFET (NXP)

BUK101-50DL PowerMOS transistor Logic level TOPFET (NXP)

BUK101-50GL PowerMOS transistor Logic level TOPFET (NXP)

BUK101-50GS PowerMOS transistor TOPFET (NXP)

BUK102-50DL PowerMOS transistor Logic level TOPFET (NXP)

TAGS

BUK856-400IZ Insulated Gate Bipolar Transistor Protected Logic-Level IGBT NXP

Image Gallery

BUK856-400IZ Datasheet Preview Page 2 BUK856-400IZ Datasheet Preview Page 3

BUK856-400IZ Distributor