Logic-Level Datasheet | Specifications & PDF Download

Gr Pr STU/D601S Sa mHop Microelectronics C orp. P-Channel Logic Level Enhancement Mode Field Effect Transistor Ver 1.2 PRODUCT SUMMARY VDSS ID R

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 Description: Logic level sensitive gate triac intended to interfaced directly to microcontrollers,logic integrated circuits and other low power gate

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS -30V RDSON (MAX.) 8.5mΩ ID -25A P-Channel MOSFET UIS, R

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N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 4.0mΩ ID 75A N Channel MOSFET UIS,

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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S E M I C O N D U C T O R RFP30N06LE, RF1S30N06LE, RF1S30N06LESM 30A, 60V, ESD Rated, Avalanche Rated, Logic Level N-Channel Enhancement-Mode Power M

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T1610, T1635, T1650 BTA16, BTB16 Datasheet Snubberless™, logic level and standard 16 A Triacs A2 G A1 A2 TO-220AB G A2 A1 A2 G A1 A2 TO-220AB Ins.

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  N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  25V  D RDSON (MAX.)  6mΩ  ID  80A  G   UIS, Rg 100%

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P-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS RDSON (MAX.) -30V 8.5mΩ ID -70A P Channel MOSFET UIS, Rg

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EMB07N03HR N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS 30V RDSON (MAX.) 7mΩ ID 50A G N Channel

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EMB18A04VB Dual N-Channel Logic Level Enhancement Mode Field Effect Transistor ▪Product Summary: ▪ Pin Description: Q1 Q2 BVDSS 40V 40V RDSON

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EMF02P02H P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐20V RDSON (MAX.) 3.2mΩ ID ‐100A G UIS, R

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 12mΩ ID 12A G S Pb‐Free Lead Platin

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P‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: D BVDSS ‐100V RDSON (MAX.) 205mΩ ID ‐10A G UIS, Rg 100% Test

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 40V D RDSON (MAX.) 22mΩ ID 9A G S Pb‐Free Lead Plating

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N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 22mΩ ID 6A G UIS, Rg 100% Tested S

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EMB06N03E N‐Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: BVDSS 30V D RDSON (MAX.) 6mΩ ID 80A G UIS, Rg 100

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BTA08, BTB08, T810, T835, T850 Snubberless™, logic level and standard 8 A Triacs Datasheet - production data Features  On-state rms current, IT(RMS)

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    N‐Channel Logic Level Enhancement Mode Field Effect Transistor  Product Summary:  BVDSS  100V  D RDSON (MAX.)  150mΩ  ID  10A  G   UIS, Rg

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